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Rohm Semiconductor Electronic Components Datasheet

SSTA28 Datasheet

NPN general purpose transistor

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SSTA28 pdf
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Transistors
SSTA28 / MMSTA28
NPN general purpose transistor
SSTA28 / MMSTA28
zFeatures
1) BVCES < 80V (Ic=100µA)
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SSTA28
SST3
RAT
T116
3000
MMSTA28
SMT3
RAT
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
80
12
0.3
0.2
150
55 to +150
Unit
V
V
V
A
W
°C
°C
zExternal dimensions (Unit : mm)
SSTA28
ROHM : SST3
JEDEC : SOT-23
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
0.1
0.45±0.1
(1) (2)
0~0.1
0.2Min.
(3)
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MMSTA28
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1
+0.2
0.1
0.8±0.1
0~0.1
(3)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BVCBO
BVCES
BVEBO
ICBO
IBEO
ICES
VCE(sat) 1
VCE(sat) 2
VBE(on)
DC current transfer ratio
hFE
Transition frequency
Output Capecitance
fT
COb
Min.
80
80
12
10000
10000
125
Typ.
0.7
0.8
1.4
200
5.0
Max.
0.1
0.1
0.5
1.2
1.5
2.0
8.0
Unit
V
V
V
µA
µA
µA
V
V
V
MHz
pF
Conditions
IC = 100µA
IC = 100µA
IE = 10µA
VCB = 60V
VEB = 10V
VCE = 10V
IC/IB = 10mA/10µA
IC/IB = 100mA/0.1mA
VCE/IB = 5V/100mA
VCE = 5V , IC = 10mA
VCE = 5V , IC = 100mA
VCE = 5V , IE = 10mA , f = 100MHz
VCB = 10V , IE = 0 , f = 1MHz
1/2


Rohm Semiconductor Electronic Components Datasheet

SSTA28 Datasheet

NPN general purpose transistor

No Preview Available !

SSTA28 pdf
Transistors
SSTA28 / MMSTA28
zElectrical characteristic curves
500
Ta=25°C
450
400
350
300
250
200
150
50
45
40
35
30
25
20
15
10
5
100
50
IB=0µA
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics
100
1.6
90
80
Ta=25°C
1.4
1.2
70
1.0
60
0.8
50
40 0.6
30 0.4
20
0.2
10
IB=0µA
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.2 Typical output characteristics
200k
100k
50k
20k
10k
5k
Ta=25°C
VCE=5V
3V
1V
2k
1 2 5 10 20 50 100 200 5001000
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
200k
100k
50k
20k
10k
5k
Ta=25°C
25°C
40°C
VCE=5V
2k
1 2 5 10 20 50 100 200 5001000
IC-COLLECTOR CURRENT (mA)
Fig.4 DC current gain vs. collector
current
1.8
Ic/IB=1000
1.6
1.4
1.2
1.0
Ta= 40°C
0.8 25°C
0.6 125°C
0.4
0.2
0
1 2 5 10 20 50 100 200 5001000
IC-COLLECTOR CURRENT (mA)
Fig.5 Collecor emitter saturation
voltage vs collector current
2.2
Ic/IB=1000
2.0
1.8
1.6 Ta= 40°C
1.4 25°C
1.2
1.0 125°C
0.8
0.6
0.4
1 2 5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
Fig.6 Base emitter saturation voltage
vs collector current
2.2
VCE=5V
2.0
1.8
1.6 Ta= 40°C
1.4 25°C
1.2
1.0 125°C
0.8
0.6
0.4
1 2 5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
Fig.7 Base emitter "ON" voltage
vs collector current
100
f=1MHz
Ta=25°C
50
20
10
5 Cib
2 Cob
1
0.5 1 2
5 10 20
50
REVERSE BIAS VOLTAGE (V)
Fig.8 Capacitance
vs reverse bias voltage
1000
500
Ta=25°C
VCE=10V
200
100
50
20
10
1 10 100 1000
IC-COLLECTOR CURRENT (mA)
Fig.9 Current gain-bandwdth product
vs collector current
2/2


Part Number SSTA28
Description NPN general purpose transistor
Maker Rohm
Total Page 3 Pages
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