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Rohm Semiconductor Electronic Components Datasheet

SSTA56 Datasheet

PNP General Purpose Transistor

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SSTA56 pdf
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Transistors
SSTA56 / MMSTA56 / MPSA56
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
!Features
1) BVCEO < −40V (IC = 1mA)
2) Complements the SSTA06 / MMSTA06 / MPSA06.
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SSTA56
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
MPSA56
TO-92
-
T93
3000
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power SSTA56, MMSTA56
dissipation
MPSA56
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
80
4
0.5
0.2
0.625
150
55~+150
Unit
V
V
V
A
W
°C
°C
!External dimensions (Units : mm)
SSTA56
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
0.1
0.45±0.1
(1) (2)
0~0.1
0.2Min.
(3)
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MMSTA56
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1
+0.2
0.1
0.8±0.1
0~0.1
ROHM : SMT3
EIAJ : SC-59
(3)
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MPSA56
4.8±0.2
3.7±0.2
ROHM : TO-92
EIAJ : SC-43
0.5±0.1
(1)
(2)
(3)
2.5
+0.3
0.1
5
0.45±0.1
(1) Emitter
2.3 (2) Base
(3) Collector
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Symbol
BVCBO
BVCEO
ICBO
ICEO
VCE(sat)
VBE(on)
hFE
fT
Min.
4
80
-
-
-
-
100
100
50
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
0.1
1
0.25
1.2
-
-
-
Unit
V
V
µA
V
V
-
MHz
Conditions
IC = 100µA
IC = 1mA
VCB = 80V
VCE = 60V
IC/IB = 100mA/10mA
VCE/IB = 1V/100mA
VCE = 1V , IC = 10mA
VCE = 1V , IC = 100mA
VCE = 1V , IE = 100mA , f = 100MHz


Rohm Semiconductor Electronic Components Datasheet

SSTA56 Datasheet

PNP General Purpose Transistor

No Preview Available !

SSTA56 pdf
Transistors
SSTA56 / MMSTA56 / MPSA56
!Electrical characteristic curves
500
Ta=25°C
4.5mA
4.0mA
3.5mA
400 3.0mA
300
5.0mA
2.5mA
2.0mA
1.5mA
200 1.0mA
1000
100
Ta=25°C
VCC=5V
3V
1V
0.5mA
100
IB=0mA
0
0
0.4 0.8 1.2 1.6
2.0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics
10
1 10 100 1000
IC-COLLECTOR CURRENT (mA)
Fig.2 DC current gain vs. collector
current ( Ι )
1000
100
Ta=125°C
25°C
40°C
VCE=3V
10
1 10 100 1000
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
IC / IB=10
0.3
Ta=125°C
0.2 25°C
40°C
0.1
0
1 10 100 1000
IC-COLLECTOR CURRENT (mA)
Fig.4 Collector emitter saturation
voltage vs. collector current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
Ta=25°C
IC / IB=10
10 100 1000
IC-COLLECTOR CURRENT (mA)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
VCE=3V
Ta=40°C
25°C
125°C
10 100 1000
IC-COLLECTOR CURRENT (mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
Fig.6 Grounded emitter propagation
characteristics
500 1000
Ta=25°C
f=1MHz
100
Cib
100
Ta=25°C
VCE=10V
Cob
10
5
0.5 1
10 50
REVERSE BIAS VOLTAGE (V)
Fig.7 Input/output capecitance
vs. voltage
10
1 10 100 1000
IC-COLLECTOR CURRENT (mA)
Fig.8 Gain bandwidth product
vs. collector current


Part Number SSTA56
Description PNP General Purpose Transistor
Maker Rohm
Total Page 2 Pages
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