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RU6099 Datasheet Preview

RU6099 Datasheet

N-Channel Advanced Power MOSFET

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RU6099 pdf
RU6099
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/120A,
RDS (ON) =6m(Type) VGS=10V IDS=40A
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
175°C Operating Temperature
• Lead Free and Green Available
Applications
Switching Application Systems
Inverter Systems
Pin Description
TO-220
TO-263
TO-220F
TO-247
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2009
Rating
60
±25
175
-55 to 175
120(Max)
380
120
90
200
150
0.8
1000
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
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Ruichips
Ruichips

RU6099 Datasheet Preview

RU6099 Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

RU6099 pdf
RU6099
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU6099
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=-250µA
VDS= 60V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±25V, VDS=0V
VGS= 10V, IDS=40A
60
2
V
1
µA
30
34V
±100 nA
6.0 7.0 m
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=20 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=30V, RL=30,
IDS= 1A, VGEN= 10V,
RG=8
VDS=30V, VGS= 10V,
IDS=40A
0.83 1.1
50
95
V
ns
nC
1.3
3000
430
240
14
17
40
62
27
31
68
95
pF
ns
72 105
13 nC
24
Notes:
Calculated continuous current based on maximum allowable
current is 75A.
Pulse test ; Pulse width300µs, duty cycle2%.
Guaranteed by design, not subject to production testing.
junction temperature. Package limitation
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2009
2
www.ruichips.com
Free Datasheet http://www.Datasheet4U.com


Part Number RU6099
Description N-Channel Advanced Power MOSFET
Maker Ruichips
Total Page 11 Pages
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