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1SS106 Datasheet Preview

1SS106 Datasheet

SILICON SCHOTTKY BARRIER DIODE

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1SS106 pdf
1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Average Forward Current
Junction Temperature
Storage Temperature Range
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Symbol
VR
IO
TJ
Tstg
Value
10
30
125
- 55 to + 125
Unit
V
mA
OC
OC
Electrical Characteristics at Ta = 25 OC
Parameter
Forward Current
at VF = 1 V
Reverse Current
at VR = 6 V
Capacitance
at VR = 1 V, f = 1 MHz
Rectifier Efficiency
at Vin = 2 Vrms, f = 40 MHz, RL = 5 K, CL = 20 pF
ESD Capability 1)
at C = 200 pF, both forward and reverse direction 1 pulse.
1) Failure criterion: IR 140 µA at VR = 6 V
Symbol
IF
IR
C
η
-
Min.
4.5
-
-
70
100
Max.
-
70
1.5
-
-
Unit
mA
µA
pF
%
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007


Part Number 1SS106
Description SILICON SCHOTTKY BARRIER DIODE
Maker SEMTECH
Total Page 1 Pages
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