http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





SEMTECH
SEMTECH

1SS355 Datasheet Preview

1SS355 Datasheet

SILICON EPITAXIAL PLANAR SWITCHING DIODES

No Preview Available !

1SS355 pdf
1SS355
SILICON EPITAXIAL PLANAR SWITCHING DIODES
FEATURES
Small plastic package suitable
for surface mounted design
High reliability with high surge
current handling capability
APPLICATIONS
High speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Current
Surge Current (1 s)
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IO
IFM
Isurge
Tj
Tstg
Value
90
80
100
225
500
125
- 55 to + 125
Unit
V
V
mA
mA
mA
OC
OC
Electrical Characteristics (Ta = 25 OC)
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
Capacitance between Terminals
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 100
Symbol
VF
IR
CT
trr
Max.
1.2
0.1
3
4
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009



SEMTECH
SEMTECH

1SS355 Datasheet Preview

1SS355 Datasheet

SILICON EPITAXIAL PLANAR SWITCHING DIODES

No Preview Available !

1SS355 pdf
1SS355
Forward Characteristics
1
100m
10m
Ta=125 C
Ta=75 C
Ta=25 C
Ta=-25 C
1m
100
10
0
0.4 0.8 1.2
Forward Voltage, V
Capacitance between terminals
characteristics
10
2
1
0.2
0.1
0 4 8 12 14
Reverse Voltage, VR ( V )
Surge Current Characteristics
100
Pulse
Single Pulse
20
10
2
1
0.1
1 10 100 1000
Pulse Width: Tw (ms)
10000
Reverse Characteristics
1m
0.1m
10
Ta=125 C
1 Ta=75 C
100n
10n
Ta=25 C
1n
0
40 80
Reverse Voltage, V
120
Reverse Recovery Time Characteristics
3
VR=6V
Irr=1/10IR
2
1
0 10 20 30
Forward Current (mA)
Reverse Recovery Time Measurement Circuit
0.01 F
DUT
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009


Part Number 1SS355
Description SILICON EPITAXIAL PLANAR SWITCHING DIODES
Maker SEMTECH
Total Page 4 Pages
PDF Download
1SS355 pdf
Download PDF File
1SS355 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 1SS350 UHF Detector/ Mixer Applications Sanyo Semicon Device
Sanyo Semicon Device
1SS350 pdf
2 1SS351 UHF Detector/ Mixer Applications Sanyo Semicon Device
Sanyo Semicon Device
1SS351 pdf
3 1SS351 Schottky Barrier Diode ON Semiconductor
ON Semiconductor
1SS351 pdf
4 1SS352 DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Toshiba Semiconductor
Toshiba Semiconductor
1SS352 pdf
5 1SS353 Silicon Epitaxial Planar High-Speed Switching Diodes Rohm
Rohm
1SS353 pdf
6 1SS354 Silicon Epitaxial Planar High-Speed Switching Diodes Rohm
Rohm
1SS354 pdf
7 1SS355 Switching diode Rohm
Rohm
1SS355 pdf
8 1SS355 FAST SWITCHING DIODE JCET
JCET
1SS355 pdf
9 1SS355 SWITCHING DIODE Unisonic Technologies
Unisonic Technologies
1SS355 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components