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SEMTECH ELECTRONICS
SEMTECH ELECTRONICS

1SS321 Datasheet Preview

1SS321 Datasheet

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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1SS321 pdf
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1SS321
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
Features
• Low forward voltage
• Low reverse current
3
12
Marking Code: "ZC"
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Non-Repetitive Peak Forward Surge Current ( t = 10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IO
IFM
IFSM
Pd
Tj
Tstg
Value
12
10
50
150
1
150
125
- 55 to + 125
Unit
V
V
mA
mA
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 50 mA
Reverse Current
at VR = 10 V
Reverse Breakdown Voltage
at IR = 10 µA
Total Capacitance
at VR = 0 , f = 1 MHz
Symbol
VF
IR
V(BR)R
CT
Min.
-
-
12
-
Max.
1
500
-
4.5
Unit
V
nA
V
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
Datasheet pdf - http://www.DataSheet4U.net/



SEMTECH ELECTRONICS
SEMTECH ELECTRONICS

1SS321 Datasheet Preview

1SS321 Datasheet

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

No Preview Available !

1SS321 pdf
www.DataSheet.co.kr
1SS321
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 1SS321
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Maker SEMTECH ELECTRONICS
Total Page 2 Pages
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