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SGS-Thomson
SGS-Thomson

SD1275-01 Datasheet Preview

SD1275-01 Datasheet

RF & MICROWAVE TRANSISTORS

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SD1275-01 pdf
SD1275-01
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
....160 MHz
13.6 VOLTS
COMMON EMITTER
POUT = 40 W MIN. WITH 9.0 dB GAIN
.380 4LFL (M113)
epoxy sealed
ORDER CODE
B RA ND IN G
SD1275-01
SD1275-1
PIN CONNECTION
DESCRIPTION
The SD1275-01 is a 13.6 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
communications. The SD1275-01 utilizes an emit-
ter ballasted die geometry to withstand severe load
mismatch conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
June 1993
1. Collector
2. Emitter
3. Base
4. Emitter
Value
36
16
36
4.0
8.0
70
+200
65 to +150
1.2
Unit
V
V
V
V
A
W
°C
°C
°C/W
1/4



SGS-Thomson
SGS-Thomson

SD1275-01 Datasheet Preview

SD1275-01 Datasheet

RF & MICROWAVE TRANSISTORS

No Preview Available !

SD1275-01 pdf
SD1275-01
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCES
BVCEO
BVEBO
ICBO
hFE
IC = 15mA
IC = 50mA
IE = 5mA
VCB = 15V
VCE = 5V
VBE = 0mA
IB = 0mA
IC = 0mA
IE = 0mA
IC = 250mA
Min.
36
16
4.0
20
Va l u e
Typ. Max.
——
——
——
—5
——
Unit
V
V
V
mA
DYNAMIC
S ymb o l
POUT
GP
COB
f = 160 MHz
f = 160 MHz
f = 1 MHz
Test Conditions
PIN = 5.0 W
PIN = 5.0 W
VCB = 15 V
VCE = 13.6 V
VCE = 13.6 V
Value
Min. Typ. Max.
40 — —
9 ——
— 95 —
Unit
W
dB
pF
TYPICAL PERFORMANCE
POWER GAIN vs FREQUENCY
POWER OUTPUT vs POWER INPUT
2/4


Part Number SD1275-01
Description RF & MICROWAVE TRANSISTORS
Maker SGS-Thomson
Total Page 4 Pages
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