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STMicroelectronics Electronic Components Datasheet

6045DV Datasheet

ESM6045DV

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6045DV pdf
® ESM6045DV
NPN DARLINGTON POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ULTRAFAST FREEWHEELING DIODE
s FULLY INSULATED PACKAGE (UL
COMPLIANT)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s DC/DC & DC/AC CONVERTERS
s WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV Collector-Emitter Voltage (VBE = -5 V)
VCEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current (tp = 10 ms)
IB Base Current
IBM Base Peak Current (tp = 10 ms)
Ptot Total Dissipation at Tc = 25 oC
Visol Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
September 2003
Value
600
450
7
84
126
8
16
250
2500
-55 to 150
150
Unit
V
V
V
A
A
A
A
W
V
oC
oC
1/8
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STMicroelectronics Electronic Components Datasheet

6045DV Datasheet

ESM6045DV

No Preview Available !

6045DV pdf
ESM6045DV
THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
0.5
1.2
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER #
ICEV #
Collector Cut-off
Current (RBE = 5 )
Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 oC
Tj = 100 oC
IEBO # Emitter Cut-off Current
(IC = 0)
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
hFEDC Current Gain
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 450 V
IC = 70 A VCE = 5 V
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 50 A
IC = 50 A
IC = 70 A
IC = 70 A
IB = 1 A
IB = 1 A
IB = 4 A
IB = 4 A
Tj = 100 oC
Tj = 100 oC
VBE(sat)Base-Emitter
Saturation Voltage
IC = 70 A IB = 4 A
IC = 70 A IB = 4 A Tj = 100 oC
diC/dt
VCE(3
µs)••
Rate of Rise of
On-state Collector
Collector-Emitter
Dynamic Voltage
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 1.5 A Tj = 100 oC
VCC = 300 V RC = 6
IB1 = 1.5 A Tj = 100 oC
Min. Typ.
450
120
1.2
1.6
1.35
1.7
2.3
2.4
375 450
6
Max.
1.5
22
1
15
1
2
2
3
9
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
VCE(5 Collector-Emitter
µs)•• Dynamic Voltage
VCC = 300 V RC = 6
IB1 = 1.5 A Tj = 100 oC
3 4.5 V
ts Storage Time
tf Fall Time
tc Cross-over Time
IC = 50 A VCC = 50 V
VBB = -5 V RBB = 0.3
Vclamp = 450 V IB1 = 1 A
L = 0.05 mH Tj = 100 oC
VCEW
VF
Maximum Collector
Emitter Voltage
Without Snubber
Diode Forward Voltage
ICWoff = 84 A IB1 = 4 A
VBB = -5 V VCC = 50 V
L = 0.03 mH RBB = 0.3
Tj = 125 oC
IF = 70 A Tj = 100 oC
IRM Reverse Recovery
VCC = 200 V IF = 70 A
Current
diF/dt = -375 A/µs L < 0.05 µH
Tj = 100 oC
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 1.5 + 0.0055 IF P = 1.5 IF(AV) + 0.0055 I2F(RMS)
3.5 5.5
0.3 0.5
0.8 1.7
450
µs
µs
µs
V
1.6 1.9
38 45
V
A
2/8
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Part Number 6045DV
Description ESM6045DV
Maker STMicroelectronics
Total Page 8 Pages
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