http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

BDX53BFP Datasheet

SILICON POWER DARLINGTON TRANSISTOR

No Preview Available !

BDX53BFP pdf
® BDX53BFP
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in T0-220FP fully molded
isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medium power
linear and switching applications.
3
2
1
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at Tc ≤ 25 oC
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
February 2003
R1 Typ. = 10 K
R2 Typ. = 150
Value
80
80
5
8
12
0.2
29
1500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

BDX53BFP Datasheet

SILICON POWER DARLINGTON TRANSISTOR

No Preview Available !

BDX53BFP pdf
BDX53BFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
4.3
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-emitter
Saturation Voltage
VCB = 80 V
VCE = 40 V
VEB = 5 V
IC = 100 mA
IC = 3 A
IB =12 mA
VBE(sat)Base-emitter
Saturation Voltage
IC = 3 A
hFEDC Current Gain
IC = 3 A
VFParallel Diode Forward IF = 3 A
Voltage
IF = 8 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB =12 mA
VCE = 3 V
Min. Typ.
80
750
1.8
2.5
Max.
0.2
0.5
2
2
2.5
2.5
Unit
mA
mA
mA
V
V
V
V
V
Safe Operating Area
2/4


Part Number BDX53BFP
Description SILICON POWER DARLINGTON TRANSISTOR
Maker ST Microelectronics
Total Page 4 Pages
PDF Download
BDX53BFP pdf
Download PDF File
BDX53BFP pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 BDX53BFP SILICON POWER DARLINGTON TRANSISTOR ST Microelectronics
ST Microelectronics
BDX53BFP pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components