http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

BUL742A Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

BUL742A pdf
® BUL742A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS
s FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Voltage (VBE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO
IC
Emitter-Base Voltage
(IC = 0, IB 2 A, tp < 10µs, Tj < 150oC)
Collector Current
ICM Collector Peak Current (tp <5 ms)
IB Base Current
IBM Base Peak Current (tp <5 ms)
Ptot Total Dissipation at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
October 2003
Value
950
400
V(BR)EBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
1/5


STMicroelectronics Electronic Components Datasheet

BUL742A Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

BUL742A pdf
BUL742A
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VCE = 950 V
VCE = 400 V
IC = 10 mA
IE = 1 mA
IC = 1 A
IC = 3.5 A
L = 25 mH
IB = 0.2 A
IB = 1 A
VBE(sat)Base-Emitter
Saturation Voltage
IC = 3.5 A
IB = 1 A
hFEDC Current Gain
IC = 800 mA
IC = 10 mA
VCE = 3 V
VCE = 5 V
RESISTIVE LOAD
ts Storage Time
tf Fall Time
VCC = 250 V
IB1 = 0.5 A
tp = 30 µs
Esb Avalanche Energy
L = 2 mH
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 2.5 A
IB2 = -1 A
(see figure 2)
(see figure 1)
Min. Typ.
400
12
16
10
0.9
100
6
Max.
100
250
24
0.5
1.5
1.5
40
Unit
µA
µA
V
V
V
V
V
µs
ns
mJ
Safe Operating Areas
Derating Curve
2/5


Part Number BUL742A
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Maker ST Microelectronics
Total Page 5 Pages
PDF Download
BUL742A pdf
Download PDF File
BUL742A pdf
View for Mobile






Related Datasheet

1 BUL742 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics
STMicroelectronics
BUL742 pdf
2 BUL742A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST Microelectronics
BUL742A pdf
3 BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST Microelectronics
BUL742C pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components