http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

BUT70W Datasheet

HIGH POWER NPN TRANSISTOR

No Preview Available !

BUT70W pdf
www.DataSheet4U.com
® BUT70W
HIGH POWER NPN TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
s SWITCHING REGULATORS
s MOTOR CONTROL
s HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIPTION
The BUT70W is a Multiepitaxial planar NPN
transistor in TO-247 plastic package.
It’s intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IE(RMS)
IEM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-emitter Voltage (VBE = -1.5V)
Collector-emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Emitter Current
Emitter Peak Current
Base Current
Base Peak Current
Total Power Dissipation at Tcase < 25 oC
Storage Temperature
Max Operating Junction Temperature
February 2002
Value
200
125
7
40
120
8
24
200
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

BUT70W Datasheet

HIGH POWER NPN TRANSISTOR

No Preview Available !

BUT70W pdf
BUT70W
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.63
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER
ICEV
Collector Cut-off
Current (RBE = 5)
Collector Cut-off
Current (VBE = -1.5V)
VCE = 200 V
VCE = 200 V
VCE = 200 V
VCE = 200 V
TC = 100oC
TC = 100oC
IEBO
Emitter Cut-off
Current (IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 0.2 A
L = 25 mH
IE = 50 mA
IC = 70 A
IC = 70 A
IC = 35 A
IC = 35 A
IB = 7 A
IB = 7 A
TC = 100oC
IB = 1.75 A
IB = 1.75 A TC = 100oC
VBE(sat)Base-Emitter
Saturation Voltage
IC = 70 A
IC = 70 A
IC = 35 A
IC = 35 A
IB = 7 A
IB = 7 A
TC = 100oC
IB = 1.75 A
IB = 1.75 A TC = 100oC
dic/dt
Rated of Rise of
on-state Collector
Current
VCC = 100 V
tp = 3 µs
Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
RC = 0 IB1 = 3.5 A
TC = 100oC
Min.
125
7
140
Typ.
Max.
1
5
1
4
1
0.9
1.5
0.9
1.2
1.8
1.9
1.4
1.4
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
A/µs
INDUCTIVE LOAD
Symbol
ts
tf
tc
Parameter
Storage Time
Fall Time
Cross Over Time
Test Conditions
IC = 35 A
VBB = -5 V
ΙB1 = 1.75 A
VCLAMP = 125V
VCC = 90 V
RB2 = 1.4
LC = 0.15 mH
TC = 100oC
Min.
Typ.
Max.
1.8
0.2
0.35
Unit
µs
µs
µs
2/4


Part Number BUT70W
Description HIGH POWER NPN TRANSISTOR
Maker ST Microelectronics
Total Page 4 Pages
PDF Download
BUT70W pdf
Download PDF File
BUT70W pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 BUT70 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics
STMicroelectronics
BUT70 pdf
2 BUT70W HIGH POWER NPN TRANSISTOR ST Microelectronics
ST Microelectronics
BUT70W pdf








Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components