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STMicroelectronics Electronic Components Datasheet

ESDA8V2-1MX2 Datasheet

EOS and ESD Transil protection

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ESDA8V2-1MX2
EOS and ESD Transil™ protection for charger and battery port
Features
Breakdown voltage VBR = 8.2 V
Unidirectional device
High peak power dissipation: 500 W
(8/20 µs waveform)
ESD protection level better than
IEC 61000-4-2, level 4:
30 kV contact discharge
Low leakage current (< 0.5 µA @ 5 V)
Very small PCB area (1.45 mm2)
RoHS compliant
Benefits
High EOS and ESD protection level
High integration
Suitable for high density boards
Tiny package
Complies with the following standards:
IEC 61000-4-2 level 4
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
MIL STD 883G - Method 3015-7: class 3B
– HBM (human body model): 8kV
Applications
Where EOS and ESD transient overvoltage
protection in sensitive equipment is required,
such as:
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
µQFN 2L package
Figure 1. Functional diagram (top view)
Description
The ESDA8V2-1MX2 is a unidirectional single line
Transil diode designed specifically for the
protection of integrated circuits in portable
equipment and miniaturized electonic devices
subject to EOS and ESD transient overvoltages.
TM: Transil is a trademark of STMicroelectronics
August 2008
Rev 1
1/10
www.st.com


STMicroelectronics Electronic Components Datasheet

ESDA8V2-1MX2 Datasheet

EOS and ESD Transil protection

No Preview Available !

ESDA8V2-1MX2 pdf
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1 Characteristics
ESDA8V2-1MX2
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
ESD discharge:
IEC 61000-4-2 air discharge on input pin
VPP IEC 61000-4-2 contact discharge on input pin
MIL STD 883G - Method 3015-7: class 3B
PPP Peak pulse power dissipation (8/20 µs) (1) Tj initial = Tamb
IPP Peak pulse current (8/20 µs)
Tj Junction temperature range
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit
±30
±30
±30
500
27
-40 to +125
- 55 to +150
260
Table 2. Electrical characteristics (definitions)
Symbol
Parameter
I
VBR
IRM
VRM
VCL
IPP
Cline
Breakdown voltage
Leakage current @ VRM
Stand-of voltage
Clamping voltage
Peak pulse current
Input line capacitance
IF
VCL VBR VRM
VF
I RM
IR
Slope= 1/ Rd
I PP
V
Table 3. Electrical characteristics (values, Tamb = 25 °C)
Symbol
Test Condition
Min
Typ
Max
VBR
IRM
VCL
Cline
IR = 1 mA
VRM = 5 V
IPP = 1 A (8/20 µs waveform)
IPP = 5 A (8/20 µs waveform)
Ipp = 27 A (8/20 µs waveform)
VR = 0 V, Fosc = 1 MHz, Vosc = 30 mV
8.2
0.1
350
0.5
12
13
18.5
430
Unit
kV
W
A
°C
°C
°C
Unit
V
µA
V
V
V
pF
2/10


Part Number ESDA8V2-1MX2
Description EOS and ESD Transil protection
Maker STMicroelectronics
Total Page 10 Pages
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STMicroelectronics
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