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STMicroelectronics Electronic Components Datasheet

GW40NC60V Datasheet

STGW40NC60V

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GW40NC60V pdf
STGW40NC60V
N-CHANNEL 50A - 600V - TO-247
Very Fast PowerMESH™ IGBT
Table 1: General Features
TYPE
VCES VCE(sat) (Max)
IC
@25°C
@100°C
STGW40NC60V 600 V
< 2.5 V
50 A
s HIGH CURRENT CAPABILITY
s HIGH FREQUENCY OPERATION UP TO
50 KHz
s LOSSES INCLUDE DIODE RECOVERY
ENERGY
s OFF LOSSES INCLUDE TAIL CURRENT
s LOWER CRES / CIES RATIO
s NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESHIGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
Figure 1: Package
3
2
1
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm2
Figure 2: Internal Schematic Diagram
www.DataSheet.co.kr
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s UPS
s MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
STGW40NC60V
MARKING
GW40NC60V
PACKAGE
TO-247
PACKAGING
TUBE
July 2004
Rev. 10
1/10
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STMicroelectronics Electronic Components Datasheet

GW40NC60V Datasheet

STGW40NC60V

No Preview Available !

GW40NC60V pdf
STGW40NC60V
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at 25°C (#)
IC Collector Current (continuous) at 100°C (#)
ICM (1) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Value
600
20
± 20
80
50
200
260
2.08
55 to 150
Symbol
V
V
V
A
A
A
W
W/°C
°C
Table 4: Thermal Data
Min.
Typ.
Max.
Unit
Rthj-case Thermal Resistance Junction-case
0.48 °C/W
Rthj-amb Thermal Resistance Junction-ambient
50 °C/W
TL Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300 °C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
VBR(CES)
Collectro-Emitter Breakdown IC = 1 mA, VGE = 0www.DataSheet.co.kr
Voltage
600
V
ICES
Collector-Emitter Leakage
Current (VCE = 0)
VGE = Max Rating
Tc=25°C
Tc=125°C
10 µA
1 mA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
± 100 nA
Table 6: On
Symbol
Parameter
VGE(th) Gate Threshold Voltage
VCE(SAT) Collector-Emitter Saturation
Voltage
(#) Calculated according to the iterative formula:
Test Conditions
VCE= VGE, IC= 250 µA
VGE= 15 V, IC= 40A, Tj= 25°C
VGE= 15 V, IC= 40A,
Tj= 125°C
Min.
3.75
Typ.
1.9
1.7
Max.
5.75
2.5
Unit
V
V
V
IC (TC) = -R----T----H-----J----–----C------×----T-V---J-C--M---E---A-S----AX----T-–----(-T-M---C---A-----X----)--(--T----C----,---I--C----)
2/10
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Part Number GW40NC60V
Description STGW40NC60V
Maker STMicroelectronics
Total Page 10 Pages
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