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STMicroelectronics Electronic Components Datasheet

IRFP250 Datasheet

N-CHANNEL MOSFET0

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IRFP250 pdf
IRFP250
N-CHANNEL 200V - 0.073- 33A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
IRFP250
200V < 0.08533 A
s TYPICAL RDS(on) = 0.073
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLIES (UPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
200
200
±20
33
20
132
180
1.44
5
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 33A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
Sep 2000
1/8


STMicroelectronics Electronic Components Datasheet

IRFP250 Datasheet

N-CHANNEL MOSFET0

No Preview Available !

IRFP250 pdf
IRFP250
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
33
600
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
200
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 16A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.073
Max.
4
0.085
Unit
V
33 A
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 16A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
10
Typ.
25
2850
420
120
Max.
Unit
S
pF
pF
pF
2/8


Part Number IRFP250
Description N-CHANNEL MOSFET0
Maker ST Microelectronics
Total Page 8 Pages
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