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STMicroelectronics Electronic Components Datasheet

M54HCT7007 Datasheet

HEX BUFFER

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M54HCT7007 pdf
. HIGH SPEED
tpd = 11 ns (TYP.) at VCC = 5 V
. LOW POWER DISSIPATION
ICC = 1 µA (MAX.) AT TA = 25 °C
. COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN.) VIL = 0.8V (MAX)
. OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
. SYMMETRICAL OUTPUT IMPEDANCE
|IOH| = IOL = 4 mA (MIN.)
. BALANCED PROPAGATION DELAYS
tPLH = tPHL
. PIN AND FUNCTION COMPATIBLE
WITH 54/74LS07
DESCRIPTION
The M54/74HCT7007 is a high speed CMOS HEX
BUFFER fabricated in silicon gate C2MOS technol-
ogy.
It has the same high speed performance of LSTTL
combined with true CMOS low power consumption.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age. The integrated circuit has totally compatible,
input and output characteristic, with standard 54/74
LSTTL logic families.
M54HCT/74HCT devices are designed to directly in-
terface HSC2MOS systems with TTL and NMOS
components. These devices are also plug in replace-
ment for LSTTL devices giving a reduction of power
consumption.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
M54HCT7007
M74HCT7007
HEX BUFFER
B1R
(Plastic Package)
F1R
(Ceramic Package)
M 1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HCT7007F1R M74HCT7007M1R
M74HCT7000B1R M74HCT7007 C1R
PIN CONNECTIONS (top view)
February 1993
NC =
No Internal
Connection
1/9


STMicroelectronics Electronic Components Datasheet

M54HCT7007 Datasheet

HEX BUFFER

No Preview Available !

M54HCT7007 pdf
M54/M74HCT7007
TRUTH TABLE
A
L
H
Y
L
H
PIN DESCRIPTION
PIN No
1, 3, 5, 9,
11, 13
2, 4, 6, 8,
10, 12
7
SYMBOL NAME AND FUNCTION
1A to 6A Data Inputs
1Y to 6Y Data Outputs
GND
Ground (0V)
IEC LOGIC SYMBOL
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7
V
VI DC Input Voltage
-0.5 to VCC + 0.5
V
VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
± 20 mA
IOK DC Output Diode Current
± 20 mA
IO DC Output Source Sink Current Per Output Pin
± 25 mA
ICC or IGND DC VCC or Ground Current
± 50 mA
PD Power Dissipation
500 (*)
mW
Tstg Storage Temperature
-65 to +150
oC
TL Lead Temperature (10 sec)
300 oC
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
2/9


Part Number M54HCT7007
Description HEX BUFFER
Maker ST Microelectronics
Total Page 9 Pages
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