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STMicroelectronics Electronic Components Datasheet

MD2009DFX Datasheet

High voltage NPN Power transistor

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MD2009DFX pdf
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MD2009DFX
High voltage NPN Power transistor for standard definition CRT
display
General features
State-of-the-art technology:
– diffused collector “enhanced generation”
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter hFE range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC European
directive
Applications
Horizontal deflection output for TV
Description
The MD2009DFX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
3
2
1
ISOWATT218FX
Internal schematic diagram
RBE=60typ.
Order codes
Part number
MD2009DFX
Marking
MD2009DFX
Package
ISOWATT218FX
Packaging
Tube
October 2006
Rev 4
1/10
www.st.com
10


STMicroelectronics Electronic Components Datasheet

MD2009DFX Datasheet

High voltage NPN Power transistor

No Preview Available !

MD2009DFX pdf
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
PTOT
Visol
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Base-emitter voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc = 25°C
Insulation withstand voltage (RMS) from all three
leads to external heatsink
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
MD2009DFX
Value
1500
700
7
10
16
6
58
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
°C
Value
2.15
Unit
°C/W
2/10


Part Number MD2009DFX
Description High voltage NPN Power transistor
Maker ST Microelectronics
Total Page 10 Pages
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