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STMicroelectronics Electronic Components Datasheet

P10NB50FP Datasheet

STP10NB50FP

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P10NB50FP pdf
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STP10NB50
® STP10NB50FP
N - CHANNEL 500V - 0.55- 10.6A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
STP10NB50
500 V
STP10NB50FP 500 V
< 0.60
< 0.60
10.6 A
10.6 A
s TYPICAL RDS(on) = 0.55
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Tstg
Insulation Withstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 1999
Value
Unit
STP10NB50 STP10NB50FP
500 V
500 V
± 30
V
10.6
10.6(*)
A
6.4
6.4(*)
A
42.4
42.4
A
135
1.08
40
0.32
W
W/oC
4.5 4.5 V/ns
2000
-65 to 150
150
(1) ISD 10.6 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
1/9
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STMicroelectronics Electronic Components Datasheet

P10NB50FP Datasheet

STP10NB50FP

No Preview Available !

P10NB50FP pdf
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STP10NB50 STP10NB50FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
0.93
TO-220FP
3.12
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
10.6
550
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 5.3 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
0.55 0.60
10.6
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =5.3 A
Min.
5
Typ.
8
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1480
210
25
pF
pF
pF
2/9


Part Number P10NB50FP
Description STP10NB50FP
Maker ST Microelectronics
Total Page 9 Pages
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