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STMicroelectronics Electronic Components Datasheet

S2000AF Datasheet

High voltage NPN Power transistor

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S2000AF pdf
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S2000AF
High voltage NPN Power transistor for standard
Definition CRT display
Preliminary Data
Features
State-of-the-art technology:
– Diffused collector “Enhanced generation”
Stable performances versus operating
temperature variation
Low base-drive requirement
Tigh hFE range at operating collector current
High ruggedness
Fully insulated power package U.L. compliant
In compliance with the 2002/93/EC European
directive
3
2
1
ISOWATT218FX
Applications
Horizontal deflection output for CRT TV
Switch mode power supplies for CRT TV
Internal schematic diagram
Description
The S2000AF is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure for updated
performance to the Horizontal Deflection stage.
Order codes
Part Number
S2000AF
Marking
S2000AF
Package
ISOWATT218FX
Packaging
Tube
March 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/8
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8


STMicroelectronics Electronic Components Datasheet

S2000AF Datasheet

High voltage NPN Power transistor

No Preview Available !

S2000AF pdf
Electrical ratings
1 Electrical ratings
S2000AF
Table 1. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
PTOT
Vins
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc = 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case _______________max
Value
1500
700
9
8
15
4
50
2500
-65 to 150
150
Value
2.5
Unit
V
V
V
A
A
A
W
V
°C
Unit
°C/W
2/8


Part Number S2000AF
Description High voltage NPN Power transistor
Maker ST Microelectronics
Total Page 8 Pages
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