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SD1411 Datasheet

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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SD1411 pdf
SD1411
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
......30 MHz
40 VOLTS
IMD 30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT = 200 W MIN. WITH 16 dB GAIN
.400 x .425 6LFL (M153)
epoxy sealed
ORDER CODE
SD1411
BRANDING
SD1411
PIN CONNECTION
DESCRIPTION
The SD1411 is a silicon NPN transistor designed
for telecommunications in HF and VHF frequency
bands. This device utilizes gold metallized die with
diffused emitter resistors to achieve high reliability
and ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
PDISS
Device Current
Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
October 1992
1. Collector
2. Base
3. Emitter
Value
110
55
4.0
40
330
+200
65 to +150
Unit
V
V
V
A
W
°C
°C
0.36
°C/W
1/3


STMicroelectronics Electronic Components Datasheet

SD1411 Datasheet

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

No Preview Available !

SD1411 pdf
SD1411
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCBO
BVCES
BVCER
BVCEO
BVEBO
ICES
hFE
IC = 200mA
IC = 200mA
IC = 200mA
IC = 200mA
IE = 20mA
VCE = 45V
VCE = 6V
IE = 0mA
VBE = 0V
RBE = 10
IB = 0mA
IC = 0mA
IE = 0mA
IC = 10A
Value
Unit
Min. Typ. Max.
110 — — V
110 — — V
100 — — V
55 — — V
4.0 — — V
— — 20 mA
15 — 80 —
DYNAMIC
Symbol
POUT
GP
IMD
COB
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 1 MHz
Test Conditions
VCE = 40 V
VCE = 40 V
VCE = 40 V
VCB = 50 V
ICQ = 150 mA
ICQ = 150 mA
ICQ = 150 mA
Value
Min. Typ. Max.
200 — —
16 — —
— — 30
— — 360
Unit
W
dB
dB
pF
2/3


Part Number SD1411
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Maker ST Microelectronics
Total Page 3 Pages
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