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SD1456 Datasheet

RF & MICROWAVE TRANSISTORS

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SD1456 pdf
SD1456 (TCC3100)
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
. 170 - 230 MHz
. 28 VOLTS
. CLASS AB PUSH PULL
. DESIGNED FOR HIGH POWER LINEAR
OPERATION
. HIGH SATURATED POWER CAPABILITY
. GOLD METALLIZATION
.www.DataSheDetI4FUF.cUomSED EMITTER BALLAST
RESISTORS
. COMMON EMITTER CONFIGURATION
. POUT = 100 W MIN. WITH 11.0 dB GAIN
.400 x .425 8LFL (M168)
epoxy sealed
ORDER CODE
B RA ND IN G
SD1456
TCC3100
PIN CONNECTION
DESCRIPTION
The SD1456 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band III television transmitters and trans-
posers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Emitter
3. Base
Value
65
33
3.5
16
150
+200
65 to +150
Unit
V
V
V
A
W
°C
°C
1.2 °C/W
1/5


STMicroelectronics Electronic Components Datasheet

SD1456 Datasheet

RF & MICROWAVE TRANSISTORS

No Preview Available !

SD1456 pdf
SD1456 (TCC3100)
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVCER
BVCEO
BVEBO
hFE
IC = 50mA
IC = 50mA
IC = 50mA
IE = 5mA
VCE = 5V
IE = 0mA
RBE = 15
IB = 0mA
IC = 0mA
IC = 500mA
Min.
65
60
33
3.5
20
Va l u e
Typ. Max.
——
——
——
——
— 150
Unit
V
V
V
V
DYNAMIC (Class AB)
www.DataShSeeytm4Ub.coolm
POUT
GP
ηc
COB
f = 225 MHz
POUT = 100 W
POUT = 100 W
f = 1 MHz
Test Conditions
VCE = 28 V
VCE = 28 V
VCE = 28 V
VCB = 28 V
Value
Min. Typ. Max.
IC = 2 x 100 mA 100 — —
IC = 2 x 100 mA 11 — —
IC = 2 x 100 mA 70 — —
— 60 —
Unit
W
dB
%
pF
DYNAMIC (Class A)
S ymb o l
Test Conditions
POUT* f = 225 MHz
VCE = 28 V
IC = 2 x 2.5 A
GP* PIN = 1.1 W
VCE = 28 V
IC = 2 x 2.5 A
IMD3* PIN = 1.1 W
VCE = 28 V
PREF = 28 W
N ot e:
* Class A Performance Charact eristi cs Indi cate Capabilit y but are not Tested.
IMD3 - 3 T one Meaurement; 8, 7, 16dB relative to PREF
Value
Min. Typ. Max.
28 32 —
14 15 —
51 —
Unit
W
dB
dB
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
BROADBAND POWER GAIN vs
FREQUENCY
2/5


Part Number SD1456
Description RF & MICROWAVE TRANSISTORS
Maker STMicroelectronics
Total Page 5 Pages
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