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STMicroelectronics Electronic Components Datasheet

SD1530-08 Datasheet

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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SD1530-08 pdf
SD1530-08
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
. 40 WATTS (typ.) IFF 1030 - 1090 MHz
. 35 WATTS (min.) DME 1025 - 1150 MHz
. 25 WATTS (typ.) TACAN 960 - 1215 MHz
. 9.0 dB MIN. GAIN
. REFRACTORY GOLD METALLIZATION
. EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
. INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
. INPUT MATCHED, COMMON BASE
CONFIGURATION
.250 SQ. 2LFL (M105 )
hermetically sealed
ORDER CODE
SD1530-08
BRAND ING
1530-8
PIN CONNECTION
D ESCR I PTI O N
The SD1530-08 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-08 is pack-
aged in the .250” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Pa ra m e ter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Device Current
PDISS
Power Dissipation
TJ
TSTG
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
August 1993
1. Collector
2. Base
3. Emitter
Value
65
65
3.5
2.6
87.5
+200
65 to +150
Unit
V
V
V
A
W
°C
°C
2.0 °C/W
1/5


STMicroelectronics Electronic Components Datasheet

SD1530-08 Datasheet

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

No Preview Available !

SD1530-08 pdf
SD1530-08
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCBO
BVCES
BVEBO
ICES
hFE
IC = 10 mA
IC = 25 mA
IE = 1 mA
VCE = 50 V
VCE = 5 V
IE = 0 mA
VBE = 0 V
IC = 0 mA
IE = 0 mA
IC = 500 mA
Value
Unit
Min. Typ. Max.
65 — — V
65 — — V
3.5 — — V
——
5 mA
10 — 200
DYNAMIC
Symbol
Test Conditions
POUT f = 1025 1150 MHz PIN = 5.0 W
VCE = 50 V
PG f = 1025 1150 MHz PIN = 5.0 W
ηc f = 1025 1150 MHz PIN = 5.0 W
VCE = 50 V
VCE = 50 V
Note:
Pulse W idth = 10µSec, Duty Cycle = 1%
T his device is suitable for use under other pulse wi dth/duty cycle conditi ons.
Please contact the factory for specific applications assistance.
Va lu e
Min. Typ. Max.
35 — —
8.5 — —
30 — —
Unit
W
dB
%
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
2/5


Part Number SD1530-08
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Maker ST Microelectronics
Total Page 5 Pages
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