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STMicroelectronics Electronic Components Datasheet

SD1650 Datasheet

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

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SD1650 pdf
SD1650
RF & MICROWAVE TRANSISTORS
CELLULAR BASE STATION APPLICATIONS
..... REFRACTORY/GOLD METALLIZATION
DOUBLE STEP INPUT/OUTPUT MATCH
850-960 MHz CLASS AB LINEAR
www.DataSheet4U.coCmOMMON EMITTER
POUT = 60 W MIN. WITH 7 dB MIN GAIN
.400 6LFL (M169)
epoxy sealed
ORDER CODE
BR AN DI NG
SD1650
SCELL500
PIN CONNECTION
DESCRIPTION
Designed for 900 MHz cellular radio base station
applications, the SD1650 exhibits high collector
efficiency with excellent thermal characteristics.
Double-section internal input/output matching re-
sult in terminal impedance levels easily handled
by the circuit designer.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation (+25°C)
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation
August 1992
1. Collector
2. Base
3. Emitter
Value
60
28
4.0
10
175
+200
65 to +150
1.5
Unit
V
V
V
A
W
°C
°C
°C/W
1/5


STMicroelectronics Electronic Components Datasheet

SD1650 Datasheet

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

No Preview Available !

SD1650 pdf
SD1650
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCES
BVCEO
www.DataSheet4U.comICEO
hFE
IC = 50mA
IE = 20mA
IC = 100mA
IC = 100mA
VCE = 24V
VCE = 5V
IC = 6A
Valu e
Min. Typ. Max.
60 — —
3.0 — —
60 — —
28 — —
— — 10
20 — 200
Unit
V
V
V
V
mA
DYNAMIC
S ymb o l
POUT
ηc
GP
VSWR
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
Test Conditions
PIN = 12 W
PIN = 12 W
PIN = 12 W
PIN = 12 W
ICQ = 300 mA
ICQ = 300 mA
ICQ = 300 mA
Valu e
Min. Typ. Max.
60 — —
45 — —
7 ——
3:1 — —
Unit
W
%
dB
2/5


Part Number SD1650
Description RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
Maker STMicroelectronics
Total Page 5 Pages
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