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STMicroelectronics Electronic Components Datasheet

SD1899 Datasheet

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

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SD1899
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
... REFRACTORY/GOLD METALLIZATION
EFFICIENCY - 50% TYPICAL
POUT = 30 W MIN. WITH 9.3 dB GAIN
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1899
BRANDING
SD1899
PIN CONNECTION
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DE S CR I P TI ON
The SD1899 is a common base silicon NPN bipolar
device optimized for 1.6 GHz SATCOM applica-
tions.
SD1899 offers superior gain and collector effi-
ciency, making it an ideal choice for Class C power
amplifiers used in portable as well as fixed SAT-
COM terminals.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEB O
Emitter-Base Voltage
IC Device Current
PDISS
Power Dissipation (+25°C)
TJ Junction Temperature
TST G
Storage Temperature
1. Collector
2. Emitter
3. Base
V alu e
45
45
3.0
3.5
64. 8
+200
65 to +150
Unit
V
V
V
A
W
°C
°C
DataShee
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
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January 6, 1997
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2.7
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°C/W
1/5


STMicroelectronics Electronic Components Datasheet

SD1899 Datasheet

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

No Preview Available !

SD1899 pdf
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SD1899
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
BVCBO
BVCES
BVEBO
ICBO
hFE
IC = 8 mA
IC = 8 mA
IE = 8 mA
VCB = 28 V
VCE = 5 V
Test Conditions
IE = 0 mA
VBE = 0 V
IC = 0 mA
IE = 0 mA
IC = 1.6 A
Value
Min. Typ.
45 —
45 —
3.0 —
——
15 —
Max.
2
150
Unit
V
V
V
mA
DYNAMIC
Symbol
POUT
ηc
PG
f = 1650 MHz
f = 1650 MHz
f = 1650 MHz
et4U.com
Test Conditions
VCC = 28 V
VCC = 28 V
VCC = 28 V
PIN = 3.5 W
PIN = 3.5 W
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Value
Min. Typ. Max.
30 32 —
45 50 —
9.3 — —
Unit
W
%
dB
DataShee
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2/5
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DataSheet4U.com
January 6, 1997


Part Number SD1899
Description RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS
Maker ST Microelectronics
Total Page 5 Pages
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