http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

ST13007D Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

ST13007D pdf
www.DataSheet4U.com
® ST13007D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
s HIGH VOLTAGE CAPABILITY
s INTEGRATED FREE-WHEELING DIODE
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s FULLY CHARACTERIZED AT 125 oC
s LARGE RBSOA
APPLICATIONS
s UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at Tc 25 oC
Storage Temperature
Max. Operating Junction Temperature
April 2003
Value
700
400
9
8
16
4
8
80
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
1/7


STMicroelectronics Electronic Components Datasheet

ST13007D Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

ST13007D pdf
ST13007D
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 700 V
VCE = 700 V
Tc = 100 oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VCE = 400 V
VEB = 9 V
IC = 10 mA
IC = 2 A
IC = 5 A
IC = 8 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 2 A
IB = 1 A Tc = 100 oC
VBE(sat)Base-Emitter
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 1 A
Tc = 100 oC
hFEDC Current Gain
IC = 2 A
IC = 5 A
VCE = 5 V
VCE = 5 V
Vf Diode Forward
Voltage
IC = 3 A
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
IC = 5 A
VCL = 250 V RBB = 0
IB1 = 1 A VBE(off) = -5 V
L = 200 µH (see figure 1)
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
IC = 5 A
VCL = 250 V RBB = 0
ΙB1 = 1 A VBE(off) = -5 V
L = 200 µH TC = 125 oC
(see figure 1)
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %.
Min.
400
18
8
Typ.
1.7
90
2.2
150
Max.
10
0.5
100
100
0.8
1.5
2
3
1.2
1.6
1.5
40
25
2.5
2.3
150
Unit
µA
mA
µA
µA
V
V
V
V
V
V
V
V
V
µs
ns
µs
ns
2/7


Part Number ST13007D
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Maker ST Microelectronics
Total Page 7 Pages
PDF Download
ST13007D pdf
Download PDF File
ST13007D pdf
View for Mobile






Related Datasheet

1 ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST Microelectronics
ST13007 pdf
2 ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST Microelectronics
ST13007D pdf
3 ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics
STMicroelectronics
ST13007DFP pdf
4 ST13007N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ST Microelectronics
ST Microelectronics
ST13007N pdf
5 ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ST Microelectronics
ST Microelectronics
ST13007NFP pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components