http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

STB130NS04ZB Datasheet

N-channel Power MOSFET

No Preview Available !

STB130NS04ZB pdf
www.DataSheet4U.com
STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 m- 80A TO-220/D²PAK/TO-247
FULLY PROTECTED MESH OVERLAY™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP130NS04ZB
STB130NS04ZB
STW130NS04ZB
CLAMPED
CLAMPED
CLAMPED
< 9 m
< 9 m
< 9 m
80 A
80 A
80 A
s TYPICAL RDS(on) = 7 m
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology cou-
pled with the extra clamping capabilities make this
product particularly suitable for the harshest oper-
ation conditions such as those encountered in the
automotive environment .Any other application re-
quiring extra ruggedness is also recommended.
Figure 1: Package
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH SWITCHING CURRENT
s LINEAR APPLICATIONS
Table 2: Order Codes
Sales Type
STP130NS04ZB
STB130NS04ZBT4
STW130NS04ZB
Marking
P130NS04ZB
B130NS04ZB
W130NS04ZB
Package
TO-220
D²PAK
TO-247
February 2005
Packaging
TUBE
TAPE & REEL
TUBE
Rev. 2
1/12


STMicroelectronics Electronic Components Datasheet

STB130NS04ZB Datasheet

N-channel Power MOSFET

No Preview Available !

STB130NS04ZB pdf
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDG Drain-gate Voltage
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDG Drain Gate Current (continuous)
IGS Gate Source Current (continuous)
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ)
Tj Max Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Max
Rthj-pcb (*) Thermal Resistance Junction-pcb
Max
Rthj-a Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering
Purpose (1.6 mm from case, for 10 sec)
(*)When mounted on 1 inch² FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
Value
CLAMPED
CLAMPED
CLAMPED
80
60
± 50
± 50
320
300
2.0
4
-55 to 175
TO-220
--
62.5
D²PAK
0.50
35
--
300
Max Value
80
500
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
KV
°C
TO-247
--
50
Unit
°C/W
°C/W
°C
Unit
A
mJ
2/12


Part Number STB130NS04ZB
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 12 Pages
PDF Download
STB130NS04ZB pdf
Download PDF File
STB130NS04ZB pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 STB130NS04ZB N-CHANNEL PROTECTED MESH OVERLAY MOSFET ST Microelectronics
ST Microelectronics
STB130NS04ZB pdf
2 STB130NS04ZB N-channel Power MOSFET ST Microelectronics
ST Microelectronics
STB130NS04ZB pdf
3 STB130NS04ZB-1 N-channel Power MOSFET ST Microelectronics
ST Microelectronics
STB130NS04ZB-1 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components