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STMicroelectronics Electronic Components Datasheet

STB190NF04 Datasheet

N-CHANNEL POWER MOSFET

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STB190NF04 pdf
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STP190NF04
STB190NF04 STB190NF04-1
N-CHANNEL 40V - 3.9 m- 120A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
STB190NF04/-1
STP190NF04
40 V <0.0043
40 V <0.0043
s TYPICAL RDS(on) =3.9 m
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
ID
120 A
120 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURENT, HIGH SWITCHING SPEED
s AUTOMOTIVE
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Current limited by package
February 2004
Value
40
40
± 20
120
120
480
310
2.07
7
860
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(••) Pulse width limited by safe operating area.
1) ISD 190A, di/dt 600A/µs, VDD V(BR)DSS, Tj TJMAX
1/9


STMicroelectronics Electronic Components Datasheet

STB190NF04 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STB190NF04 pdf
STB190NF04/-1 STP190NF04
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.48
50
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
40
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 95A
Min.
2
Typ. Max.
4
0.0039 0.0043
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 95 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
200
5800
1500
200
Max.
Unit
S
pF
pF
pF
2/9


Part Number STB190NF04
Description N-CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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STB190NF04 pdf
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