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STMicroelectronics Electronic Components Datasheet

STB19NB20-1 Datasheet

N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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STB19NB20-1 pdf
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STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15- 19A - TO-220/TO-220FP/I2PAK
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP19NB20
STP19NB20FP
STB19NB20-1
200 V
200 V
200 V
< 0.18
< 0.18
< 0.18
19 A
10 A
19 A
s TYPICAL RDS(on) = 0.15
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-220
3
2
1
TO-220FP
I2PAK1 2 3
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID
IDM (l)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
STP(B)19NB20(-1) STP19NB20FP
200 V
200 V
± 30 V
19 10 A
12 6.0 A
76 76 A
125 35 W
1
0.28
W/°C
5.5 V/ns
-
2500
V
–65 to 150
°C
150
(1)ISD 19 A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
°C
1/12


STMicroelectronics Electronic Components Datasheet

STB19NB20-1 Datasheet

N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

No Preview Available !

STB19NB20-1 pdf
STP19NB20/FP/STB19NB20-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220/I2PAK
1
62.5
300
TO-220FP
3.57
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
19
580
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
200
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 9.5 A
Min.
3
Typ.
4
0.15
Max.
5
0.18
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 9.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
3
Typ.
1000
285
45
Max.
Unit
S
pF
pF
pF
2/12


Part Number STB19NB20-1
Description N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Maker ST Microelectronics
Total Page 12 Pages
PDF Download
STB19NB20-1 pdf
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