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STMicroelectronics Electronic Components Datasheet

STB60NE06L-16 Datasheet

N-CHANNEL Power MOSFET

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STB60NE06L-16 pdf
® STB60NE06L-16
N - CHANNEL 60V - 0.014- 60A D2PAK
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
ID
STB60NE06L-16 60 V < 0.16 60 A
s TYPICAL RDS(on) = 0.014
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 2000
Va l u e
Un it
60 V
60 V
± 15
V
60 A
42 A
240 A
150 W
1 W /o C
1
-65 to 175
175
( 1) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/8


STMicroelectronics Electronic Components Datasheet

STB60NE06L-16 Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STB60NE06L-16 pdf
STB60NE06L-16
THERMAL DATA
Rthj-case
Rth j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1
6 2. 5
0. 5
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
60
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 5 V I D = 30 A
Resistance
VGS = 10 V ID = 30 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
60
Typ.
1.6
0.014
0.012
Max.
2.5
0.016
0.014
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
30
Max.
Unit
S
4150
590
150
pF
pF
pF
2/8


Part Number STB60NE06L-16
Description N-CHANNEL Power MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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