http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

STB60NF03L Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STB60NF03L pdf
® STB60NF03L
N-CHANNEL 30V - 0.008 - 60A D2PAK
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NF03L
30 V < 0.01 60 A
s TYPICAL RDS(on) = 0.008
s OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW THRESHOLD DRIVE
s LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s LOW VOLTAGE DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s HIGH EFFICIENCY SWITCHING CIRCUITS
PRELIMINARY DATA
3
1
D2PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
Va l u e
V DS
V DGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
30
30
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
± 20
60
42
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
240
100
Derating Factor
0.67
EAS(1) Single Pulse Avalanche Energy
650
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
September 1999
-65 to 175
175
( 1) starting Tj = 25 oC, ID = 30A , VDD = 20V
Un it
V
V
V
A
A
A
W
W /o C
mJ
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

STB60NF03L Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STB60NF03L pdf
STB60NF03L
THERMAL DATA
Rthj-case
R th j -a mb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1. 5
6 2. 5
3 00
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Tc =125 oC
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 30 A
Resistance
VGS = 4. 5V ID = 30 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
60
Typ. Max.
1.5 2.5
0.008 0.01
0.0095 0.015
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
60
Max.
Unit
S
2550
630
215
pF
pF
pF
2/6


Part Number STB60NF03L
Description N-CHANNEL Power MOSFET
Maker ST Microelectronics
Total Page 6 Pages
PDF Download
STB60NF03L pdf
Download PDF File
STB60NF03L pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 STB60NF03L N-CHANNEL Power MOSFET ST Microelectronics
ST Microelectronics
STB60NF03L pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components