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STMicroelectronics Electronic Components Datasheet

STB80NF03L-04T Datasheet

N-channel Power MOSFET

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STB80NF03L-04T-1
STB80NF03L-04T
N-CHANNEL 30 V - 0.0035- 80A D²PAK/I²PAK
STripFET™II MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STB80NF03L-04T
STB80NF03L-04T-1
30 V
30 V
< 0.004
< 0.004
s TYPICAL RDS(on) = 0.0035
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ID (1)
80 A
80 A
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
Figure 1: Package
3
1
D2PAK
123
I2PAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number
STB80NF03L-04TT4
STB80NF03L-04T-1
Marking
B80NF03L-04T
B80NF03L-04T
Package
D2PAK
I2PAK
February 2005
Packaging
TAPE & REEL
TUBE
Rev. 1
1/11


STMicroelectronics Electronic Components Datasheet

STB80NF03L-04T Datasheet

N-channel Power MOSFET

No Preview Available !

STB80NF03L-04T pdf
STB80NF03L-04T-1 - STB80NF03L-04T
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID (#)
Drain Current (continuous) at TC = 25°C
ID (#)
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery Voltage Slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(1) ISD 80A, di/dt 300A/µs, VDD =24 V ; Tj TJMAX.
(#) Limited by Package
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
Value
30
30
± 20
80
80
320
300
2.0
2.0
65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
0.5
62.5
300
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 15 V)
Max Value
40
2.3
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
1 1.5 2.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 20 A
0.0035
0.0065
0.004
0.0095
Unit
A
J
Unit
V
µA
µA
nA
V
2/11


Part Number STB80NF03L-04T
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 11 Pages
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