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STMicroelectronics Electronic Components Datasheet

STD35NF3LL-1 Datasheet

N-CHANNEL MOSFET

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STD35NF3LL-1 pdf
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STD35NF3LL
STD35NF3LL-1
N-CHANNEL 30V - 0.014 - 35A IPAK/DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD35NF3LL
STD35NF3LL-1
30 V < 0.0195 35 A
30 V < 0.0195 35 A
s TYPICAL RDS(on) = 0.016 @ 4.5V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DRIVE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
February 2002
.
Value
30
30
± 16
35
25
140
50
0.33
300
-55 to 175
(1) Starting Tj = 25 oC, ID = 17.5 A, VDD= 24 V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/10


STMicroelectronics Electronic Components Datasheet

STD35NF3LL-1 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STD35NF3LL-1 pdf
STD35NF3LL/STD35NF3LL-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
3
100
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 100°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 17.5 A
ID = 17.5 A
Min.
1
Typ. Max.
0.014 0.0195
0.016 0.0215
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =15 V
ID = 17.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
19
800
250
60
Max.
Unit
S
pF
pF
pF
2/10


Part Number STD35NF3LL-1
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 10 Pages
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STD35NF3LL-1 pdf
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