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STMicroelectronics Electronic Components Datasheet

STD616A Datasheet

HIGH VOLTAGE NPN POWER TRANSISTOR

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STD616A pdf
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® STD616A
HIGH VOLTAGE NPN POWER TRANSISTOR
s REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
s HIGH VOLTAGE CAPABILITY
s HIGH DC CURRENT GAIN
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The STD616A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
3
2
1
IPAK
TO-251
(Suffix "-1")
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. Operating Junction Temperature
June 2003
Value
1000
450
12
1.6
2.4
0.8
1.2
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

STD616A Datasheet

HIGH VOLTAGE NPN POWER TRANSISTOR

No Preview Available !

STD616A pdf
STD616A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
6.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0 V)
VCE = 1000 V
VCE = 1000 V Tj = 125 oC
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
VEBO
Emitter-Base Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 100 mA
IE = 1 mA
IC = 250 mA
IC = 0.8 A
L = 25 mH
IB = 65 mA
IB = 250 mA
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
DC Current Gain
IC = 250 mA
IC = 0.8 A
IC = 200 µA
IC = 300 mA
IC = 480 mA
IC = 1.6 A
IB = 65 mA
IB = 250 mA
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
RESISTIVE LOAD
ton Turn On Time
ts Storage Time
tf Fall Time
VCC = 250 V
IB1 = 65 mA
IC = 250 mA
IB2= -130 mA
RESISTIVE LOAD
ton Turn On Time
ts Storage Time
tf Fall Time
VCC = 250 V
IB1 = 160 mA
IC = 0.8 A
IB2 = -0.4 A
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
Vcl = 300 V
IB1 = 65 mA
L = 200 µH
IC = 250 mA
IB2 = -130 mA
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
Vcl = 300 V
IB1 = 160 mA
L = 200 µH
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 0.8 A
IB2= -0.4 A
Min. Typ.
450
12
17
25
12
4
Max.
50
0.5
0.3
0.5
1
1.2
0.2
5
0.65
1
2.5
0.35
5
0.5
2.5
0.25
Unit
µA
mA
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6


Part Number STD616A
Description HIGH VOLTAGE NPN POWER TRANSISTOR
Maker ST Microelectronics
Total Page 6 Pages
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STD616A pdf
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