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STMicroelectronics Electronic Components Datasheet

STGD6NC60HD Datasheet

N-CHANNEL IGBT

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STGD6NC60HD
N-CHANNEL 6A - 600V DPAK
Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
VCES
VCE(sat)
IC
(Max) @25°C @100°C
STGD6NC60HDT4 600 V < 2.5 V
6A
s LOWER ON-VOLTAGE DROP (Vcesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s LOSSES INCLUDE DIODE RECOVERY
ENERGY
s LOWER CRES/CIES RATIO
s HIGH FREQUENCY OPERATION
s VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
s NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESHIGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
s MOTOR DRIVERS
Table 2: Order Code
PART NUMBER
STGD6NC60HDT4
MARKING
GD6NC60HD
PACKAGE
DPAK
PACKAGING
TAPE & REEL
June 2005
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice
Rev. 1
1/9


STMicroelectronics Electronic Components Datasheet

STGD6NC60HD Datasheet

N-CHANNEL IGBT

No Preview Available !

STGD6NC60HD pdf
STGD6NC60HD
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES Collector-Emitter Voltage (VGS = 0)
VECR Emitter-Collector Voltage
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at TC = 25°C (#)
IC Collector Current (continuous) at TC = 100°C (#)
ICM ( ) Collector Current (pulsed)
IF Diode RMS Forward Current at TC = 25°C
PTOT Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Operating Junction Temperature
( ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Rthj-case
Rthj-amb
TL
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering Purpose (1.6 mm from
case, for 10 sec.)
Value
600
20
±20
10
6
24
TBD
50
0.40
55 to 150
Min.
Typ.
275
Max.
2.5
100
Unit
V
V
V
A
A
A
A
W
W/°C
°C
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
Test Conditions
Min. Typ. Max.
VBR(CES) Collector-Emitter Breakdown
Voltage
IC = 1 mA, VGE = 0
600
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
10
1
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250 µA
3.75
5.75
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tc= 125°C
1.9 2.5
1.7
(#) Calculated according to the iterative formula:
Unit
V
µA
mA
nA
V
V
V
IC (T C )
=
--------------------------------T----J---M------A-----X-----–-----T----C---------------------------------
RTHJ – C × VCESAT(M AX)(TC, IC)
2/9


Part Number STGD6NC60HD
Description N-CHANNEL IGBT
Maker ST Microelectronics
Total Page 9 Pages
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