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STMicroelectronics Electronic Components Datasheet

STGP10NB60S Datasheet

N-CHANNEL IGBT

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STGP10NB60S
STGP10NB60SFP- STGB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK
PowerMESH™ IGBT
Table 1: General Features
TYPE
VCES VCE(sat) (Max)
IC
@25°C
@100°C
STGP10NB60S 600 V
STGP10NB60SFP 600 V
STGB10NB60S 600 V
< 1.7 V
< 1.7 V
< 1.7 V
10 A
10 A
10 A
s HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
s VERY LOW ON-VOLTAGE DROP( Vcesat )
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESHIGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve
minimum on-voltage drop for low frequency appli-
cations (<1kHz).
Figure 1: Package
3
2
1
TO-220FP
3
2
1
TO-220
3
1
D²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
s LIGHT DIMMER
s STATIC RELAYS
s MOTOR CONTROL
Table 2: Order Codes
SALES TYPE
STGP10NB60S
STGP10NB60SFP
STGB10NB60ST4
MARKING
GP10NB60S
GP10NB60SFP
GB10NB60S
PACKAGE
TO-220
TO-220FP
D²PAK
February 2005
PACKAGING
TUBE
TUBE
TAPE & REEL
Rev.2
1/13


STMicroelectronics Electronic Components Datasheet

STGP10NB60S Datasheet

N-CHANNEL IGBT

No Preview Available !

STGP10NB60S pdf
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at 25°C
IC Collector Current (continuous) at 100°C
ICM (1) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VISO
Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)
Tstg Storage Temperature
Tj Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Value
TO-220/D²PAK
600
20
± 20
20
10
80
80
0.64
--
TO-220FP
25
0.20
2500
55 to 150
Table 4: Thermal Data
Min. Typ. Max.
Rthj-case Thermal Resistance Junction-case
TO-220
D²PAK
1.56
TO-220FP
5.0
Rthj-amb Thermal Resistance Junction-ambient
62.5
TL Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
Unit
V
V
V
A
A
A
W
W/°C
V
°C
Unit
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
VBR(CES) Collectro-Emitter
Breakdown Voltage
IC = 250 µA, VGE = 0
600
VBR(ECS) Emitter-Collector
Breakdown Voltage
IC = 1mA, VGE = 0
20
ICES
Collector cut-off
(VGE = 0)
VGE = Max Rating, Tc=25°C
VCE = Max Rating, Tc=125°C
10
100
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
±100
Unit
V
V
µA
µA
nA
Table 6: On
Symbol
Parameter
VGE(th) Gate Threshold Voltage
VCE(SAT) Collector-Emitter
Saturation Voltage
Test Conditions
VCE= VGE, IC= 250 µA
VGE=15 V, IC= 5 A,
VGE=15 V, IC= 10 A,
VGE=15 V, IC= 10 A, Tj= 125°C
Min.
2.5
Typ.
1.15
1.35
1.25
Max.
5
1.7
Unit
V
V
V
V
2/13


Part Number STGP10NB60S
Description N-CHANNEL IGBT
Maker ST Microelectronics
Total Page 13 Pages
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