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STMicroelectronics Electronic Components Datasheet

STH310N10F7-6 Datasheet

N-CHANNEL Power MOSFET

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STH310N10F7-6 pdf
STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
22
Power MOSFET in H PAK-2 and H PAK-6 packages
Datasheet - production data
Features
TAB
2
3
1
H2PAK-2
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order codes
VDS RDS(on) max. ID
STH310N10F7-2
100 V
STH310N10F7-6
2.3 mΩ
180 A
Ultra low on-resistance
100% avalanche tested
Applications
Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Order codes
STH310N10F7-2
STH310N10F7-6
Table 1. Device summary
Marking
Package
310N10F7
2
H PAK-2
2
H PAK-6
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID024040 Rev 2
1/19
www.st.com


STMicroelectronics Electronic Components Datasheet

STH310N10F7-6 Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STH310N10F7-6 pdf
Contents
Contents
STH310N10F7-2, STH310N10F7-6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 DocID024040 Rev 2


Part Number STH310N10F7-6
Description N-CHANNEL Power MOSFET
Maker STMicroelectronics
Total Page 19 Pages
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