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STMicroelectronics Electronic Components Datasheet

STN7NF10 Datasheet

N-CHANNEL MOSFET

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STN7NF10
N-CHANNEL 100V - 0.055 - 5A SOT-223
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STN7NF10
100 V < 0.065
s TYPICAL RDS(on) = 0.055
s APPLICATION ORIENTED
CHARACTERIZATION
ID
5A
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
December 2002
Value
100
100
±20
5
3.4
20
3.3
0.026
–55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
1/8


STMicroelectronics Electronic Components Datasheet

STN7NF10 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STN7NF10 pdf
STN7NF10
THERMAL DATA
Rthj-PCB Thermal Resistance Junction-PCB Max(*)
Rthj-PCB Thermal Resistance Junction-PCB Max(**)
Tl Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case,for 10s)
Note: (*) When mounted on 1 in2 FR-4 BOARD,2 oz Cu, t<10s.
Note: (**) When mounted on minimum footprint.
38
100
260
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5 A
Min.
2
Typ.
3
0.055
Max.
4
0.065
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V , ID = 1.5 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
12
870
125
52
Max.
Unit
S
pF
pF
pF
2/8


Part Number STN7NF10
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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