http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

STP135N10 Datasheet

N-channel Power MOSFET

No Preview Available !

STP135N10 pdf
www.DataSheet4U.com
STB135N10
STP135N10
N-CHANNEL 100V - 0.007 - 135A D²PAK/TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STB135N10
STP135N10
100 V
100 V
<0.009 135 A(*)
<0.009 135 A(*)
s TYPICAL RDS(on) = 0.007
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode’s
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
s HIGH-EFFICIENCY DC-DC CONVERTERS
s 42V AUTOMOTIVE APPLICATIONS
s SYNCHRONOUS RECTIFICATION
s DIESEL INJECTION
s PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(*) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(1) Pulse width limited by safe operating area.
(*) Value limited by wire bonding
Value
100
100
± 20
135
96
540
150
1
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(2) ISD 40A, di/dt 600A/µs, VDD BVDSS, Tj TJMAX.
(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
1/8


STMicroelectronics Electronic Components Datasheet

STP135N10 Datasheet

N-channel Power MOSFET

No Preview Available !

STP135N10 pdf
STB135N10 STP135N10
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
Unit
V
µA
µA
nA
ON (5)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 67.5 A
Min.
2
Typ.
0.007
Max.
4
0.009
Unit
V
DYNAMIC
Symbol
gfs (5)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID = 67.5 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
TBD
6350
890
250
Max.
Unit
S
pF
pF
pF
2/8


Part Number STP135N10
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 8 Pages
PDF Download
STP135N10 pdf
Download PDF File
STP135N10 pdf
View for Mobile






Related Datasheet

1 STP135N10 N-channel Power MOSFET ST Microelectronics
ST Microelectronics
STP135N10 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components