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STMicroelectronics Electronic Components Datasheet

STP200NF04L Datasheet

N-CHANNEL STripFET II MOSFET

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STP200NF04L pdf
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STP200NF04L
STB200NF04L - STB200NF04L-1
N-CHANNEL 40V - 3 m- 120 A TO-220/D²PAK/I²PAK
STripFET™ II MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STB200NF04L
STP200NF04L
STB200NF04L-1
40 V
40 V
40 V
3.5 m
3.8 m
3.8 m
s TYPICAL RDS(on) = 3m
s 100% AVALANCHE TESTED
s LOW THERESHOLD DRIVE
ID
120 A
120 A
120 A
Figure 1: Package
3
2
1
TO-220
3
1
D²PAK
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
stripbased process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less-
critical alignement steps therefore a remarkable
manufacturing reproducibility. This new improved
device has been specifically designed for Automo-
tive applications.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
123
I²PAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
PART NUMBER
STP200NF04L
STB200NF04L
STB200NF04L-1
MARKING
P200NF04L
B200NF04L
B200NF04L
PACKAGE
TO-220
D²PAK
I²PAK
April 2005
PACKAGING
TUBE
TAPE & REEL
TUBE
Rev. 1
1/12


STMicroelectronics Electronic Components Datasheet

STP200NF04L Datasheet

N-CHANNEL STripFET II MOSFET

No Preview Available !

STP200NF04L pdf
STP200NF04L - STB200NF04L - STB200NF04L-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VGDR
Drain-gate Voltage (RGS=20 KΩ)
VGS Gate- source Voltage
ID (**) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)ISD 100 A, di/dt 240 A/µs, VDD 32 , Tj TJMAX
(2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V
(**) Current limited by Package
Value
40
40
± 16
120
120
480
300
2
3.6
1.4
-55 to 175
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Max
Rthj-pcb (*) Thermal Resistance Junction-pcb
Max
Rthja Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
(*)When mounted on 1 inch² FR4 2oZ Cu
TO-220/I²PAK
0.50
62.5
300
D²PAK
35
--
--
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
40
IDSS
Zero Gate Voltage
VDS= Max Rating
Drain Current (VGS = 0) VD = Max Rating, TC= 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
14
RDS(on)
Static Drain-source On VGS = 10 V, ID = 50 A
Resistance
VGS = 5 V, ID = 50 A
TO-220
I²PAK
3.3 3.8
3.8 4.6
VGS = 10 V, ID = 50 A
VGS = 5 V, ID = 50 A
D²PAK
3.0 3.5
3.5 4.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
Unit
°C/W
°C/W
°C
Unit
V
µA
µA
nA
V
m
m
m
m
2/12


Part Number STP200NF04L
Description N-CHANNEL STripFET II MOSFET
Maker ST Microelectronics
Total Page 12 Pages
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STP200NF04L pdf
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