DUAL N-CHANNEL 30V - 0.018 Ω - 8A SO-8
LOW GATE CHARGE STripFET™ III POWER MOSFET
30 V <0.022 Ω
■ TYPICAL RDS(on) = 0.018Ω
■ OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
This application specific MOSFET is the Third generation
of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows the
best trade-off between on-resistance and gate charge.
When used as high and low side in buck regulators, it
gives the best performance in terms of both conduction
and switching losses. This is extremely important for
motherboards where fast switching and high efficiency
are of paramount importance.
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
VDS Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
TAPE & REEL