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STMicroelectronics Electronic Components Datasheet

STS8DNH3LL Datasheet

Dual N-CHANNEL Power MOSFET

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STS8DNH3LL pdf
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STS8DNH3LL
DUAL N-CHANNEL 30V - 0.018 - 8A SO-8
LOW GATE CHARGE STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS8DNH3LL
30 V <0.022
8A
TYPICAL RDS(on) = 0.018
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific MOSFET is the Third generation
of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows the
best trade-off between on-resistance and gate charge.
When used as high and low side in buck regulators, it
gives the best performance in terms of both conduction
and switching losses. This is extremely important for
motherboards where fast switching and high efficiency
are of paramount importance.
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS8DNH3LL
MARKING
S8DNH3LL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
June 2004
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Value
30
30
± 16
8
5
32
2
Rev.0.2
Unit
V
V
V
A
A
A
W
1/9


STMicroelectronics Electronic Components Datasheet

STS8DNH3LL Datasheet

Dual N-CHANNEL Power MOSFET

No Preview Available !

STS8DNH3LL pdf
STS8DNH3LL
TAB.1 THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
Storage Temperature
(*) When mounted on 1 inch2 FR-4 board, 2 oz of Cu, t 10s
Max 62.5
150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
TAB.2 OFF
Symbol
Parameter
Test Conditions
Min.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
Typ.
Max.
1
10
±100
Unit
V
µA
µA
nA
TAB.3 ON (*)
Symbol
Parameter
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 4 A
ID = 4 A
Min.
1
Typ. Max.
0.018 0.022
0.020 0.025
Unit
V
TAB.4 DYNAMIC
Symbol
Parameter
gfs (*)
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS=15 V
ID = 4 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
8.5
857
147
20
Max.
Unit
S
pF
pF
pF
2/9


Part Number STS8DNH3LL
Description Dual N-CHANNEL Power MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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