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STTH3012 Datasheet

Ultrafast recovery - 1200 V diode

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STTH3012 pdf
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STTH3012
Ultrafast recovery - 1200 V diode
Main product characteristics
IF(AV)
VRRM
Tj
VF (typ)
trr (typ)
30 A
1200 V
175° C
1.30 V
57 ns
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
AK
A
K
DO-247
STTH3012W
A
K
TO-220AC
STTH3012D
Order codes
Part Number
STTH3012D
STTH3012W
Marking
STTH3012D
STTH3012W
March 2006
Rev 1
www.st.com
1/9
9


STMicroelectronics Electronic Components Datasheet

STTH3012 Datasheet

Ultrafast recovery - 1200 V diode

No Preview Available !

STTH3012 pdf
Characteristics
1 Characteristics
STTH3012
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Tc = 105° C
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
1200
50
30
300
210
-65 to + 175
175
Unit
V
A
A
A
A
°C
°C
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Value
0.95
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
Tj = 25° C
VF(2) Forward voltage drop
Tj = 125° C
Tj = 150° C
Tj = 25° C
Tj = 125° C
IF = 25 A
IF = 30 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.60 x IF(AV) + 0.012 IF2(RMS)
20
15 150
2.1
1.25 1.9
1.20 1.8
2.25
1.35 2.05
1.30 1.95
µA
V
2/9


Part Number STTH3012
Description Ultrafast recovery - 1200 V diode
Maker ST Microelectronics
Total Page 9 Pages
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