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STMicroelectronics Electronic Components Datasheet

STTH802 Datasheet

Ultrafast recovery diode

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STTH802 pdf
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STTH802
Ultrafast recovery diode
Main product characteristics
IF(AV)
VRRM
Tj (max)
VF (typ)
trr (typ)
8A
200 V
175° C
0.8 V
17 ns
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
High junction temperature
Description
The STTH802 uses ST's new 200 V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, DPAK,
and D2PAK this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
A
K
A
K
TO-220AC
STTH802D
K
A
NC
DPAK
STTH802B
Order codes
Part Number
STTH802D
STTH802FP
STTH802B
STTH802B-TR
STTH802G
STTH802G-TR
K
A
K
TO-220FPAC
STTH802FP
K
A
NC
D2PAK
STTH802G
Marking
STTH802
STTH802
STTH802
STTH802
STTH802
STTH802
September 2006
Rev 2
www.st.com
1/11


STMicroelectronics Electronic Components Datasheet

STTH802 Datasheet

Ultrafast recovery diode

No Preview Available !

STTH802 pdf
Characteristics
1 Characteristics
STTH802
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
Repetitive peak reverse voltage
RMS forward current
Average
TO-220A, DPAK, D2PAK
forward
current, δ = 0.5 TO-220FPAC
Surge non
repetitive
tp = 10 ms Sinusoidal
forward current
Tc = 145° C
Tc = 125° C
200
16
8
100
V
A
A
A
Tstg Storage temperature range
Tj Maximum operating junction temperature
-65 to + 175
175
°C
°C
Table 2. Thermal parameters
Symbol
Rth(j-c)
Junction to case
Parameter
TO-220AC, DPAK, D2PAK
TO-220FPAC
Value
3.2
5.5
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 150° C
VR = VRRM
IF = 8 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.73 x IF(AV) + 0.021 IF2(RMS)
6
6 60
0.95 1.05
0.8 0.90
µA
V
2/11


Part Number STTH802
Description Ultrafast recovery diode
Maker ST Microelectronics
Total Page 11 Pages
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