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STMicroelectronics Electronic Components Datasheet

STU9NC80Z Datasheet

N-CHANNEL 800V - 0.82ohm

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STU9NC80Z pdf
STU9NC80Z
STU9NC80ZI
N-CHANNEL 800V - 0.82- 8.6A Max220/I-Max220
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STU9NC80Z
STU9NC80ZI
800 V
800 V
<0.9
<0.9
8.6 A
8.6 A
s TYPICAL RDS(on) = 0.82
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
23
1
Max220
I-Max220
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(q) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Sep 2000
Value
STU9NC80Z
STU9NC80ZI
800
800
±25
8.6 8.6(*)
5.4 5.4(*)
34.4
34.4(*)
160
1.28
55
0.44
±50
4
3
-- 2000
–65 to 150
150
(1)ISD 8.6A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
1/10


STMicroelectronics Electronic Components Datasheet

STU9NC80Z Datasheet

N-CHANNEL 800V - 0.82ohm

No Preview Available !

STU9NC80Z pdf
STU9NC80Z/STU9NC80ZI
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Max220
I-Max220
0.78 2.27
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
8.6
400
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
800
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
1
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.7A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
0.82
Max.
5
0.9
Unit
V
8.6 A
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =4.7A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
13
3500
230
25
Max.
Unit
S
pF
pF
pF
2/10


Part Number STU9NC80Z
Description N-CHANNEL 800V - 0.82ohm
Maker ST Microelectronics
Total Page 10 Pages
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