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STMicroelectronics Electronic Components Datasheet

STW34NB20 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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STW34NB20
N-CHANNEL 200V - 0.062 - 34A TO-247
PowerMESH™ MOSFET
Table 1. General Features
Type
VDSS
RDS(on)
STW34NB20 200 V < 0.075
ID
34 A
Figure 1. Package
FEATURES SUMMARY
TYPICAL RDS(on) = 0.062
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
HIGH CURRENT, HIGH SPEED SWITCHING
3
2
1
TO-247
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STW34NB20
Marking
W34NB20
Package
TO-247
Packaging
TUBE
April 2004
REV. 2
1/10


STMicroelectronics Electronic Components Datasheet

STW34NB20 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

STW34NB20 pdf
STW34NB20
Table 3. Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (cont.) at TC = 25 °C
ID Drain Current (cont.) at TC = 100 °C
IDM (1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25 °C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
Note: 1. Pulse width limited by safe operating area
Table 4. Thermal Data
Symbol
Parameter
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
Table 5. Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C; ID = IAR; VDD = 50 V)
Value
200
200
± 30
34
21
136
180
1.44
-65 to 150
150
Value
0.69
30
300
Max Value
34
650
Unit
V
V
V
A
A
A
W
W°/C
°C
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
2/10


Part Number STW34NB20
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker ST Microelectronics
Total Page 10 Pages
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