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STMicroelectronics Electronic Components Datasheet

TN1215-1000B-TR Datasheet

SENSITIVE & STANDARD(12A SCRs)

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TN1215-1000B-TR pdf
®
SENSITIVE & STANDARD
TN12, TS12 and TYNx12 Series
12A SCRs
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
12 A
VDRM/VRRM
600 to 1000
V
IGT
0.2 to 15
mA
DESCRIPTION
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
A
G
K
A
A
KA
G
DPAK
(TS12-B)
(TN12-B)
A
KA
G
D2PAK
(TN12-G)
A
KA
G
IPAK
(TS12-H)
(TN12-H)
K
A
G
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Tc = 105°C
Tc = 105°C
ITSM
It
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Non repetitive surge peak
on-state current
tp = 8.3 ms
tp = 10 ms
I t Value for fusing
Critical rate of rise of on-state
current IG = 2 x IGT , tr 100 ns
Peak gate current
tp = 10 ms
F = 60 Hz
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN12 & TYN)
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Value
Unit
12
8
DPAK /
IPAK
115
110
60
D PAK /
TO-220AB
146
140
98
A
A
A
AS
50 A/µs
4
1
- 40 to + 150
- 40 to + 125
5
A
W
°C
V
September 2000 - Ed: 3
1/10


STMicroelectronics Electronic Components Datasheet

TN1215-1000B-TR Datasheet

SENSITIVE & STANDARD(12A SCRs)

No Preview Available !

TN1215-1000B-TR pdf
TN12, TS12 and TYNx12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SENSITIVE
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1 k
IG = 1 mA RGK = 1 k
VD = 67 % VDRM RGK = 220
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 220
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS1220
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
s STANDARD
Symbol
Test Conditi ons
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33
VD = VDRM RL = 3.3 k
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN1215
TYN
B/H G x12T x12
2 0.5
15 5
1.3
0.2
40 30 15
80 60 30
200 40
1.6
0.85
30
5
2
2
15
30
60
200
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
mA
Unit
mA
V
V
mA
mA
V/µs
V
V
m
µA
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (DC)
Junction to ambient
S = Copper surface under tab
Parameter
S = 1 cm
S = 0.5 cm
TO-220AB
IPAK
D PAK
DPAK
Value
1.3
60
100
45
70
Unit
°C/W
°C/W
2/10


Part Number TN1215-1000B-TR
Description SENSITIVE & STANDARD(12A SCRs)
Maker STMicroelectronics
Total Page 10 Pages
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