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TN1605H-6FP Datasheet

SCRs

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TN1605H-6FP pdf
TN1605H-6FP
High temperature 16 A SCRs
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Features
High junction temperature: Tj = 150 °C
High noise immunity dV/dt = 200 V/µs up to
150 °C
Gate triggering current IGT = 6 mA
Blocking voltage VDRM/VRRM = 600 V
High turn on current rise dI/dt: 100 A/µs
ECOPACK®2 compliant component
Complies with UL standards (File ref: E81734)
Insulated package TO-220FPAB:
– Insulated voltage: 2000 VRMS
Datasheet production data
Applications
Voltage regulator circuits for motorbikes
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
Description
Thanks to a junction temperature up to 150 °C
and an insulated TO-220FPAB package, the
TN1605H-6FP offers high thermal performance
up to 16 A rms.
The trade-off between the device's noise
immunity (dV/dt = 200 V/µs), its gate triggering
current (IGT = 6 mA) and its turn-on current rise
(dI/dt = 100 A/µs) allows the design of robust and
compact control circuits for voltage regulators in
motorbikes and industrial drives, overvoltage
crowbar protection, motor control circuits in power
tools and kitchen appliances, and inrush current
limiting circuits.
The insulated fullpack package allows a
back-to-back configuration.
Table 1. Device summary
Order code
Package VDRM/VRRM IGT
TN1605H-6FP TO-220FPAB 600 V
6 mA
February 2015
This is information on a product in full production.
DocID027546 Rev 1
1/9
www.st.com
9


STMicroelectronics Electronic Components Datasheet

TN1605H-6FP Datasheet

SCRs

No Preview Available !

TN1605H-6FP pdf
Characteristics
1 Characteristics
TN1605H-6FP
Table 2. Absolute ratings
Symbol
Parameter
Value Unit
IT(RMS) On-state rms current (180° conduction angle)
IT(AV) Average on-state current (180° conduction angle)
ITSM
I²t
dI/dt
VDRM,
VRRM
IGM
PG(AV)
Tstg
Tj
TL
Vins
Non repetitive surge peak on-state current
(Tj initial = 25 °C)
I²t value for fusing (Tj initial = 25 °C)
Critical rate of rise of on-state current
IG = 2 x IGT, tr 100 ns, Tj = 25 °C
Repetitive peak off-state voltage
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
Insulation rms voltage, 1 minute
Tc = 83 °C
Tc = 83 °C
Tc = 102 °C
Tc = 117 °C
t = 8.3ms
t = 10 ms
tp = 10 ms
f = 60 Hz
16 A
10
8A
6
153
A
140
98 A²s
100 A/µs
600 V
Tj = 150 °C
Tj = 150 °C
4A
1W
- 40 to + 150
°C
- 40 to + 150
260 °C
TO-220FPAB
2000
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Value
Unit
IGT
VGT
VGD
IH
IL
dV/dt
tgt
tq
VD = 12 V, RL = 33 Ω
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 500 mA, gate open
IG = 1.2 x IGT
VD = 402 V, gate open
IT = 32 A, VD = 600 V, IG = 100 mA,
(dIG/dt)max = 0.2 A/µs
VD = 402 V, VR = 25 V, IT = 16 A,
(dIG/dt)max = 30A/µs, dVD/dt = 40 V/µs
Min.
Typ.
Max.
Max.
Tj = 150 °C Min.
Max.
Max.
Tj = 150 °C Min.
Typ
Tj = 150 °C Typ
3.5
4.5
6
1.3
0.2
20
40
200
1.9
70
mA
V
V
mA
mA
V/µs
µs
µs
2/9 DocID027546 Rev 1


Part Number TN1605H-6FP
Description SCRs
Maker STMicroelectronics
Total Page 9 Pages
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