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SamHop Microelectronics
SamHop Microelectronics

STD302S Datasheet Preview

STD302S Datasheet

N-Channel Logic Level E nhancement Mode Field Effect Transistor

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STD302S pdf
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S T U/D302S
S amHop Microelectronics C orp.
Apr 03,2006
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
30V
ID
50 A
R DS (ON) ( m ) Max
9 @ VGS = 10V
12 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TC=25 C
a
-P ulsed
Drain-S ource Diode Forward C urrent
S ymbol
VDS
VGS
ID
IDM
IS
Limit
30
20
50
180
20
Unit
V
V
A
A
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
TJ, TSTG
R JC
R JA
-55 to 175
3
50
C
C /W
C /W
1



SamHop Microelectronics
SamHop Microelectronics

STD302S Datasheet Preview

STD302S Datasheet

N-Channel Logic Level E nhancement Mode Field Effect Transistor

No Preview Available !

STD302S pdf
S T U/D302S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
OFF CHARACTERISTICS
5 Drain-S ource Breakdown Voltage
BVDSS VGS =0V, ID =250uA
30
V
Zero Gate Voltage Drain Current
IDSS VDS =24V, VGS =0V
1 uA
Gate-Body Leakage
ON CHARACTERISTICS a
IGSS VGS = 20V, VDS= 0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.7 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =20A
VGS =4.5V, ID= 10A
7 9 m ohm
10 12 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID = 10A
50
22
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =15V, VGS = 0V
COSS f =1.0MHZ
CRSS
1020 PF
325 PF
225 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr ID = 1 A
tD(O F F )
VGS = 10V
R GEN = 6 ohm
tf
0.25
18
33
37
28
ohm
ns
ns
ns
ns
Total Gate Charge
Qg VDS =15V, ID =20A,VGS =10V
26
nC
Gate-S ource Charge
Gate-Drain Charge
VDS =15V, ID =20A,VGS =4.5V
Qgs VDS =15V, ID = 20A
Qgd VGS =10V
13
2.3
8.2
nC
nC
nC
2


Part Number STD302S
Description N-Channel Logic Level E nhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 9 Pages
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