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SamHop Microelectronics
SamHop Microelectronics

STD3030NL Datasheet Preview

STD3030NL Datasheet

N-Channel Logic Level E nhancement Mode Field Effect Transistor

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STD3030NL pdf
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S T U/D3030NL
S amHop Microelectronics C orp.
Apr 27,2005 ver1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
30V
ID R DS (ON) ( m W ) Max
18 @ VGS = 10V
30A
36 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TC=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
S ymbol
VDS
VGS
ID
IDM
IS
Limit
30
20
30
75
20
Unit
V
V
A
A
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange TJ, TS TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1



SamHop Microelectronics
SamHop Microelectronics

STD3030NL Datasheet Preview

STD3030NL Datasheet

N-Channel Logic Level E nhancement Mode Field Effect Transistor

No Preview Available !

STD3030NL pdf
S T U/D3030NL
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS VGS = 0V, ID = 250uA 30
IDSS VDS = 24V, VGS = 0V
V
1 uA
Gate-Body Leakage
ON CHARACTERISTICS a
IGSS VGS = 20V, VDS = 0V
100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250uA 1 1.7 2.5 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS = 10V, ID =20A
VGS = 4.5V, ID = 12A
13 18 m ohm
23 36 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS b
VDS = 10V, VGS = 10V
VDS = 10V, ID = 20A
40
16
VDs =15V, VGS = 0V
f = 1.0MHZ
872
196
105
A
S
PF
PF
PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
tD(ON) VDD = 15V,
tr
ID =1A,
VGS = 10V,
tD(OFF) R GEN = 6 ohm
7.6 ns
23.5 ns
15.8 ns
tf 5 ns
Qg VDD = 15V,ID =20A,VGS =10V
VDS = 15V,ID =20A,VGS =4.5V
15.3
7.5
nC
nC
Qgs VDD =15V, ID =20A,
Qgd VGS=10V
2.3 nC
4.2 nC
2


Part Number STD3030NL
Description N-Channel Logic Level E nhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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