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SamHop Microelectronics
SamHop Microelectronics

STS8205 Datasheet Preview

STS8205 Datasheet

Dual N-Channel E nhancement Mode Field Effect Transistor

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STS8205 pdf
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S TS 8205
S amHop Microelectronics C orp.
J un,08 2005 ver 1.4
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( mW ) Max
20V 4A
30 @ VGS = 4.0V
46 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S1
D1/D2
S2
TSOP6
Top View
16
25
34
G1
D1/D2
G2
D1 D2
G1
S1
G2
S2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
10
4
25
2
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
100
C /W
1



SamHop Microelectronics
SamHop Microelectronics

STS8205 Datasheet Preview

STS8205 Datasheet

Dual N-Channel E nhancement Mode Field Effect Transistor

No Preview Available !

STS8205 pdf
S TS 8205
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
Forward Transconductance
DYNAMIC CHARACTERISTICS c
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
C ondition
VGS =0V, ID =250uA
VDS =16V, VGS =0V
VGS = 10V,VDS =0V
VDS =VGS, ID = 250uA
VGS =4.0V, ID = 4A
VGS =2.5V, ID = 3A
VDS = 5V, ID =4A
VDS =8V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGEN = 4.0V,
R L = 10 ohm
R GEN = 10 ohm
VDS =10V, ID = 4A,
VGS =4.0V
Min Typ C Max Unit
20 V
1 uA
100 nA
0.5 0.8 1.5 V
27 30 m ohm
35 46 m ohm
13 S
800 PF
155 PF
125 PF
18.3 ns
4.8 ns
43.5 ns
20 ns
11 nC
2.2 nC
2.5 nC
2


Part Number STS8205
Description Dual N-Channel E nhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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