PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Ultrasmall size making it easy to provide high-
density, small-sized hybrid ICs.
( ) : 2SA1416
Absolute Maximum Ratings at Ta = 25˚C
3 1.5 2
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Moutned on ceramic board (250mm2×0.8mm)
Collector Cutoff Current
ICBO VCB=(–)100V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)100mA
fT VCE=(–)10V, IC=(–)100mA
* : The 2SA1416/2SC3646 are classified by 100mA hFE as follows :
hFE 100 to 200
2SA1416 : AB
2SC3646 : CB
140 S 280 200 to 400
hFE rank : R, S, T
–55 to +150
min typ max
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/4