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Sanyo Electric Components Datasheet

B1122 Datasheet

2SB1122

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B1122 pdf
Ordering number:2040A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1122/2SD1622
Low-Frequency Power Amplifier Applications
Applications
· Voltage regulators relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET process..
· Very small size making it easy to provide high-
density hybrid IC’s.
Package Dimensions
unit:mm
2038
[2SB1122/2SD1622]
E : Emitter
C : Collector
B : Base
( ) : 2SB1122
Specifications
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Ratings
(–)60
(–)50
(–)5
(–)1
(–)2
500
1.3
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
Ratings
min typ
100*
30
150
(12)
8.5
max
(–)100
(–)100
560*
Unit
nA
nA
MHz
pF
pF
* ; The 2SB1122/2SD1622 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4107KI/9266AT, TS No.2040–1/4


Sanyo Electric Components Datasheet

B1122 Datasheet

2SB1122

No Preview Available !

B1122 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1122/2SD1622
Symbol
Conditions
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)500mA, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit.
tstg See specified Test Circuit.
tf See specified Test Circuit.
Ratings
min typ
(–180)
120
(–)0.9
(–)60
(–)50
(–)5
40
(40)
350
(300)
30
(30)
max
(–500)
300
(–)1.2
Unit
mV
mV
V
V
V
V
ns
ns
ns
ns
ns
ns
No.2040–2/4


Part Number B1122
Description 2SB1122
Maker Sanyo
Total Page 4 Pages
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